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TBB1005 twin build in biasing circuit mos fet ic vhf/uhf rf amplifier ade-208-989f (z) preliminary 7th. edition dec. 2000 features small smd package cmpak-6 built in twin bbfet; to reduce using parts cost & pc board space. suitable for world standard tuner rf amplifier. very useful for total tuner cost reduction. withstanding to esd; build in esd absorbing diode. withstand up to 200 v at c = 200 pf, rs = 0 conditions. provide mini mold packages; cmpak-6 outline cmpak-6 3 1 6 4 1. drain(1) 2. source 3. drain(2) 4. gate-1(2) 5. gate-2 6. gate-1(1) 2 5 notes: 1. marking is ?m? 2. TBB1005 is individual type number of hitachi twin bbfet.
TBB1005 2 absolute maximum ratings (ta = 25c) item symbol ratings unit drain to source voltage v ds 6v gate1 to source voltage v g1s +6 -0 v gate2 to source voltage v g2s +6 -0 v drain current i d 30 ma channel power dissipation pch *3 250 mw channel temperature tch 150 c storage temperature tstg ?5 to +150 c notes: 3. value on the glass epoxy board (49mm 38mm 1mm). electrical characteristics (ta = 25c) the below specification are applicable for uhf unit (fet1) item symbol min typ max unit test conditions drain to source breakdown voltage v (br)dss 6 v i d = 200 m a, v g1s = v g2s = 0 gate1 to source breakdown voltage v (br)g1ss +6v i g1 = +10 m a, v g2s = v ds = 0 gate2 to source breakdown voltage v (br)g2ss +6v i g2 = +10 m a, v g1s = v ds = 0 gate1 to source cutoff current i g1ss +100 na v g1s = +5v, v g2s = v ds = 0 gate2 to source cutoff current i g2ss +100 na v g2s = +5v, v g1s = v ds = 0 gate1 to source cutoff voltage v g1s(off) 0.5 0.75 1.0 v v ds = 5v, v g2s = 4v, i d = 100 m a gate2 to source cutoff voltage v g2s(off) 0.5 0.75 1.0 v v ds = 5v, v g1s = 5v, i d = 100 m a drain current i d(op) 13 17 21 ma v ds = 5v, v g1 = 5v v g2s = 4v, r g = 100k w forward transfer admittance |y fs | 212631msv ds = 5v, v g1 = 5v, v g2s =4v r g = 100k w , f = 1khz input capacitance c iss 1.4 1.8 2.2 pf v ds = 5v, v g1 = 5v output capacitance c oss 1.0 1.4 1.8 pf v g2s =4v, r g = 100k w reverse transfer capacitance c rss 0.02 0.04 pf f = 1mhz power gain pg 16 21 db v ds = v g1 = 5v, v g2s = 4v r g = 100k w , f = 900mhz zi=s11*, zo=s22*(:pg) noise figure nf 1.7 2.5 db zi=s11opt (:nf)
TBB1005 3 electrical characteristics (ta = 25c) the below specification are applicable for vhf unit (fet2) item symbol min typ max unit test conditions drain to source breakdown voltage v (br)dss 6 v i d = 200 m a, v g1s = v g2s = 0 gate1 to source breakdown voltage v (br)g1ss +6v i g1 = +10 m a, v g2s = v ds = 0 gate2 to source breakdown voltage v (br)g2ss +6v i g2 = +10 m a, v g1s = v ds = 0 gate1 to source cutoff current i g1ss +100 na v g1s = +5v, v g2s = v ds = 0 gate2 to source cutoff current i g2ss +100 na v g2s = +5v, v g1s = v ds = 0 gate1 to source cutoff voltage v g1s(off) 0.5 0.75 1.0 v v ds = 5v, v g2s = 4v, i d = 100 m a gate2 to source cutoff voltage v g2s(off) 0.5 0.75 1.0 v v ds = 5v, v g1s = 5v, i d = 100 m a drain current i d(op) 14 18 22 ma v ds = 5v, v g1 = 5v, v g2s = 4v, r g = 82k w forward transfer admittance |y fs | 202530msv ds = 5v, v g1 = 5v, v g2s =4v, r g = 82k w , f = 1khz input capacitance c iss 2.2 2.6 3.0 pf v ds = 5v, v g1 = 5v output capacitance c oss 1.2 1.6 2.0 pf v g2s =4v, r g = 82k w reverse transfer capacitance c rss 0.03 0.05 pf f = 1mhz power gain pg 22 27 db v ds = v g1 = 5v, v g2s = 4v noise figure nf 1.2 1.7 db r g = 82k w , f = 200mhz
TBB1005 4 test circuits dc biasing circuit for operating characteristic items (i d(op) , |yfs|, ciss, coss, crss, nf, pg) measurment of fet1 gate 1 source open r g v g1 i d v d open drain v g2 gate 2 a measurment of fet2 open source gate 2 r g drain a i d v g2 v g1 v d gate 1 open
TBB1005 5 equivalent circuit bbfet-(1) bbfet-(2) no.1 no.2 no.3 no.6 no.5 no.4 drain(1) source drain(2) gate-1(1) gate-2 gate-1(2) 200 mhz power gain, noise figure test circuit v g2 input(50 w ) 1000p 36p 1000p l1 v = v d g1 r g twinbbfet rfc output(50 w ) l2 1000p 10p max 1000p 1000p 47k 1sv70 1000p 1000p 1000p 47k 47k 82k v t v t unit : resistance ( w ) capacitance (f) 1sv70 l1 : f 1mm enameled copper wire,inside dia 10mm, 2turns l2 : f 1mm enameled copper wire,inside dia 10mm, 2turns rfc : f 1mm enameled copper wire,inside dia 5mm, 2turns
TBB1005 6 400 300 200 100 0 50 100 150 200 0 1 2345 25 20 15 10 5 v = 4 v v = v g2s g1 ds 25 20 15 10 5 0 1 2345 50 40 30 20 10 0 12345 v = 5 v r = 120 k w ds g v = 5 v ds channel power dissipation pch* (mw) ambient temperature ta ( c) maximum channel power dissipation curve drain current i (ma) d typical output characteristics (fet1) drain to source voltage v (v) ds drain current vs. gate1 voltage (fet1) gate1 voltage v (v) g1 drain current i (ma) d r = 68 k g w 82 k w 100 k w 2 v v = 1 v g2s 4 v 3 v * value on the glass epoxy board (49mm 38mm 1mm) 120 k w 150 k w 180 k w gate1 voltage v (v) g1 forward transfer admittance vs. gate1 voltage (fet1) fs forward transfer admittance |y | (ms) v = 4 v g2s 150 k w r = 68 k g w 100 k w
TBB1005 7 0 1 2 34 4 3 2 1 0 gate2 to source voltage v (v) g2s input capacitance ciss (pf) input capacitance vs. gate2 to source voltage (fet1) 0 1 2345 25 20 15 10 5 v = 4 v v = v g2s g1 ds drain current i (ma) d typical output characteristics (fet2) drain to source voltage v (v) ds r = 56 k g w 68 k w 100 k w 120 k w 150 k w 82 k w 25 20 15 10 5 0 1 2345 v = 5 v r = 82 k w ds g drain current vs. gate1 voltage (fet2) gate1 voltage v (v) g1 drain current i (ma) d 2 v v = 1 v g2s 4 v 3 v 30 25 20 15 10 5 0 10 20 50 100 200 500 1000 v = 5 v v = 5 v v = 4 v ds g1 g2s drain current vs. gate resistance (fet1) drain current i (ma) d gate resistance r (k w ) g v = 5 v v = 5 v r = 100 k w f = 1 mhz ds g1 g
TBB1005 8 50 40 30 20 10 0 12345 v = 5 v ds gate1 voltage v (v) g1 forward transfer admittance vs. gate1 voltage (fet2) fs forward transfer admittance |y | (ms) v = 4 v g2s 120 k w r = 56 k g w 82 k w 0 1 2 34 4 3 2 1 0 gate2 to source voltage v (v) g2s input capacitance ciss (pf) input capacitance vs. gate2 to source voltage (fet2) 30 25 20 15 10 5 0 10 20 50 100 200 500 1000 v = 5 v v = 5 v v = 4 v ds g1 g2s drain current vs. gate resistance (fet2) drain current i (ma) d gate resistance r (k w ) g 40 35 30 25 20 15 10 10 20 50 100 200 500 1000 v = 5 v v = 5 v v = 4 v f = 200 mhz ds g1 g2s power gain vs. gate resistance (fet2) gate resistance r (k w ) g power gain pg (db) v = 5 v v = 5 v r = 82 k w f = 1 mhz ds g1 g
TBB1005 9 0 4 3 2 1 10 20 50 100 200 500 1000 v = 5 v v = 5 v v = 4 v f = 200 mhz ds g1 g2s noise figure vs. gate resistance (fet2) noise figure nf (db) gate resistance r (k w ) g 4 0 10 20 30 40 50 3 2 10 ds g v = v = 5 v r = 82 k w g1 gain reduction gr (db) gain reduction vs. gate2 to source voltage (fet2) gate2 to source voltage v (v) g2s
TBB1005 10 package dimensions 2.1 0.3 6-0.2 0.9 0.1 (0.2) 2.0 0.2 (0.65) (0.65) 1.3 0.2 (0.425) (0.425) hitachi code jedec eiaj mass (reference value) cmpak-6 conforms 0.006 g 0.15 0 to 0.1 + 0.1 ?0.05 + 0.1 ?0.05 1.25 0.1 as of january, 2001 unit: mm
TBB1005 11 cautions 1. hitachi neither warrants nor grants licenses of any rights of hitachi? or any third party? patent, copyright, trademark, or other intellectual property rights for information contained in this document. hitachi bears no responsibility for problems that may arise with third party? rights, including intellectual property rights, in connection with use of the information contained in this document. 2. products and product specifications may be subject to change without notice. confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. hitachi makes every attempt to ensure that its products are of high quality and reliability. however, contact hitachi? sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. design your application so that the product is used within the ranges guaranteed by hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as fail- safes, so that the equipment incorporating hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the hitachi product. 5. this product is not designed to be radiation resistant. 6. no one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from hitachi. 7. contact hitachi? sales office for any questions regarding this document or hitachi semiconductor products. hitachi, ltd. semiconductor & integrated circuits. nippon bldg., 2-6-2, ohte-machi, chiyoda-ku, tokyo 100-0004, japan tel: tokyo (03) 3270-2111 fax: (03) 3270-5109 copyright ? hitachi, ltd., 2000. all rights reserved. printed in japan. hitachi asia ltd. hitachi tower 16 collyer quay #20-00, singapore 049318 tel : <65>-538-6533/538-8577 fax : <65>-538-6933/538-3877 url : http://www.hitachi.com.sg url northamerica : http://semiconductor.hitachi.com/ europe : http://www.hitachi-eu.com/hel/ecg asia : http://sicapac.hitachi-asia.com japan : http://www.hitachi.co.jp/sicd/indx.htm hitachi asia ltd. (taipei branch office) 4/f, no. 167, tun hwa north road, hung-kuo building, taipei (105), taiwan tel : <886>-(2)-2718-3666 fax : <886>-(2)-2718-8180 telex : 23222 has-tp url : http://www.hitachi.com.tw hitachi asia (hong kong) ltd. group iii (electronic components) 7/f., north tower, world finance centre, harbour city, canton road tsim sha tsui, kowloon, hong kong tel : <852>-(2)-735-9218 fax : <852>-(2)-730-0281 url : http://www.hitachi.com.hk hitachi europe ltd. electronic components group. whitebrook park lower cookham road maidenhead berkshire sl6 8ya, united kingdom tel: <44> (1628) 585000 fax: <44> (1628) 585160 hitachi europe gmbh electronic components group dornacher stra b e 3 d-85622 feldkirchen, munich germany tel: <49> (89) 9 9180-0 fax: <49> (89) 9 29 30 00 hitachi semiconductor (america) inc. 179 east tasman drive, san jose,ca 95134 tel: <1> (408) 433-1990 fax: <1>(408) 433-0223 for further information write to: colophon 2.0

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